Gallium-arsenide deep-level materials for THz and fiber-optic applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Gallium arsenide deep-level optical emitter for fibre optics
2. Optical emission from bound states of semiconductor deep-centers
3. Analytical method for finding the general optical properties of semiconductor deep centers
4. Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density
5. An efficient room-temperature silicon-based light-emitting diode
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Generation and detection of terahertz radiation up to 4.5 THz by low-temperature grown GaAs photoconductive antennas excited at 1560 nm;Applied Physics Letters;2013-07-08
2. Semiconductor investigation by terahertz radiation pulses;SPIE Proceedings;2012-10-15
3. Terahertz generation by photoconductors made from low-temperature-grown GaAs annealed at moderate temperatures;Electronics Letters;2011
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