Gallium arsenide deep-level optical emitter for fibre optics-Reference-Cited by-同舟云学术

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Gallium arsenide deep-level optical emitter for fibre optics

Published:2003-05-04 Issue:6 Volume:2 Page:375-378
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nature Mater

Author:

Pan Janet L.,McManis Joseph E.,Osadchy Thomas,Grober Louise,Woodall Jerry M.,Kindlmann Peter J.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://www.nature.com/articles/nmat887.pdf

Reference13 articles.

1. Melloch, M.R. et al. Low-temperature grown III-V materials. Ann. Rev. Mater. Sci. 25, 547–600 ( 1995).

2. Melloch, M.R. et al. Molecular beam epitaxy of nonstoichiometric semiconductors and multiphase material systems. Crit. Rev. Solid State Mater. Sci. 21, 189–263 ( 1996).

3. Pan, J.L. Optical emission from bound states of semiconductor deep-centres. Opt. Express 9, 796–805 ( 2001).

4. Pan, J.L. Analytical method for finding the general optical properties of semiconductor deep centres. J. Appl. Phys. 92, 5991–6004 ( 2002).

5. Agrawal, G.P. & Dutta, N.K. Long Wavelength Semiconductor Lasers 225, 244–247 (Van Nostrand Reinhold, New York, 1986).

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