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Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature

  • Published:2006-04 Issue: Volume:376-377 Page:403-406
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Takakura K.,Hayama K.,Watanabe D.,Ohyama H.,Kudou T.,Shigaki K.,Matsuda S.,Kuboyama S.,Kishikawa T.,Uemura J.,Simoen E.,Claeys C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Radiation Effects in Advanced Semiconductor Materials and Devices;Claeys,2002

2. S. Cimino, et al., in: Proceedings of RADECS 2004 Workshop, Madrid, Spain, September 22–24, p. 221.

3. The influence of implantation temperature and subsequent annealing on residual implantation defects in silicon

4. Electrical and optical properties of defects in silicon introduced by high-temperature electron irradiation
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