A theoretical study of erbium in GaN-Reference-Cited by-同舟云学术

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A theoretical study of erbium in GaN

Published:2006-04 Issue: Volume:376-377 Page:512-515
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hourahine B.,Sanna S.,Aradi B.,Köhler C.,Frauenheim T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Effect of annealing on the optical and structural properties of GaN:Er

2. Three-color integration on rare-earth-doped GaN electroluminescent thin films

3. Magnetic properties of the rare‐earth‐doped semiconductor GaEuN

4. Photoluminescence and lattice location of Eu and Pr implanted GaN samples

5. Electron spin resonance of erbium in gallium nitride

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2. Structural and magnetic properties of SmCo5−XNiX intermetallic compounds;Journal of Alloys and Compounds;2021-11

3. Effect of Erbium doping on GaN electronic and optical properties: First-principles study;Modern Physics Letters B;2019-09-30

4. Perspective: Toward efficient GaN-based red light emitting diodes using europium doping;Journal of Applied Physics;2018-04-28

5. Ab initio investigation of the AlN:Er system;Computational Materials Science;2017-10

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