Electrical characterization of proton irradiated –n– Si diode
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Power Semiconductor Device;Baliga,1996
2. Investigation of carrier removal in electron irradiated silicon diodes
3. Comparison of the effects of electron and proton irradiation on n+–p–p+ silicon diodes
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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