Comparison of capacitance-frequency and current-voltage characteristics of Al/CdS-PVP/p-Si and Al/p-Si structures-Reference-Cited by-同舟云学术

Comparison of capacitance-frequency and current-voltage characteristics of Al/CdS-PVP/p-Si and Al/p-Si structures

Published:2022-09 Issue: Volume:640 Page:413836
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hosseini Zakieh^ORCID,Azizian-Kalandaragh Yashar,Sobhanian Samad,Pirgholi-Givi Gholamreza,Kouhi Mohammad^ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference60 articles.

1. A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer;Alptekin;J. Mater. Sci. Mater. Electron.,2019

2. The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range;Turut;J. Alloys Compd.,2019

3. The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures;Karabulut;J. Mol. Struct.,2018

4. The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): exploring its electrophysical parameters;Pirgholi-Givi;Phys. B Condens. Matter,2020

5. On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements;Namini;Appl. Phys. A,2020

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incorporation of Cd nanocrystals into the CdS/Si nanoheterojunctions interface by a two-step method: Preparation, optical properties and carrier transportation;Physics Letters A;2024-10

2. On the impact of pure PVC and (PVC: Ti) interlayer on the conduction mechanisms and physical parameters of classic metal-semiconductor (MS) Schottky diodes (SDs);Physica B: Condensed Matter;2024-09

3. Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture;ChemistrySelect;2024-06-20

4. The influence of the physicochemical processes on the electrical response of Al/p-Si structure with etched surface;Applied Physics A;2024-03-23

5. Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method;Journal of Materials Science: Materials in Electronics;2024-02