Electronic structure of piezoelectric In0.2Ga0.8N quantum dots in GaN calculated using a tight-binding method
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces
2. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
3. Narrow photoluminescence peaks from localized states in InGaN quantum dot structures
4. Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
5. Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
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