Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles-Reference-Cited by-同舟云学术

Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Published:2002-05 Issue:3 Volume:14 Page:313-322
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Cheng Y.T.,Huang Y.S.,Lin D.Y.,Pollak F.H.,Evans K.R.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Overview of recent development of HEMTs in the mm-wave range

2. Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications

3. Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures

4. In surface segregation and growth‐mode transition during InGaAs growth by molecular‐beam epitaxy

5. Surface chemistry evolution during molecular beam epitaxy growth of InGaAs

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative research for GaAs photocathodes with graded compositional Al x Ga 1−x As buffer layer;Optics Communications;2015-03

2. Characteristics of p-GaAs/p-AlxGa1-xAs/si-GaAs studied by surface photovoltage;SPIE Proceedings;2012-11-20

3. Comparative research on activation technique for GaAs photocathodes;Optics Communications;2012-03

4. Research on surface photovoltage spectroscopy for GaAs photocathodes with AlxGa1?xAs buf fer layer;Chinese Optics Letters;2012

5. Comparative research for transmission-mode GaAs photocathodes of different doping structures on surface photovoltage;Optics Communications;2011-09