Electron and hole localization in coupled InP/InGaP self-assembled quantum dots
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Excited states and energy relaxation in stacked InAs/GaAs quantum dots
2. Electron and hole confinement in stacked self-assembled InP quantum dots
3. Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure
4. Structural and optical properties of vertically aligned InP quantum dots
5. Electronic structure of strainedInP/Ga0.51In0.49Pquantum dots
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Building semiconductor nanostructures atom by atom;Microelectronics Journal;2008-03
2. Strain effects on the electronic structure of strongly coupled self-assembledInAs∕GaAsquantum dots: Tight-binding approach;Physical Review B;2006-11-29
3. Nonparabolic band effects inGaAs∕AlxGa1−xAsquantum dots and ultrathin quantum wells;Physical Review B;2005-09-14
4. Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0–;Physica E: Low-dimensional Systems and Nanostructures;2005-02
5. Coupling and Strain Effects in Vertically Stacked Double InAs/GaAs Quantum Dots: Tight-Binding Approach;Acta Physica Polonica A;2004-08
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