New methods of metrology data analysis during semiconductor processing and application to rapid thermal processing-Reference-Cited by-同舟云学术

New methods of metrology data analysis during semiconductor processing and application to rapid thermal processing

Published:1998-12 Issue:3-4 Volume:1 Page:195-200
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Boin Manuela,Lerch Wilfried

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. WAFERMAP for Win95/NT 1.0. Users manual. Boin (GmbH), 1998

2. Boin M. Methods of separation of input and process distributions from measurement data sets. Internal report. Manuela Boin Scientific Software, 1998

3. Defect guarded rapid thermal processing;Nenyei;J Electrochem Soc,1993

4. Ion implantation and rapid thermal annealing in synergy for shallow junction formation;Lerch;Phys Status Solidi (a),1996

5. Nenyei Z, Wein G, Lerch W, Grunwald C, Gelpey J, Wallmüller S. RTP development requirements. In: Proceedings of the 5th International Conf. on Advanced Thermal Processing of Semiconductors RTP'97. New Orleans/Louisiana, 1997. p. 35–43

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-source ensemble method with random source selection for virtual metrology;Annals of Operations Research;2024-08-17

2. Virtual metrology for copper-clad laminate manufacturing;Computers & Industrial Engineering;2017-07

3. Virtual metrology for run-to-run control in semiconductor manufacturing;Expert Systems with Applications;2011-03