Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference24 articles.
1. Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
2. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
3. Improved Si3N4/Si/GaAs metal‐insulator‐semiconductor interfaces by in situ anneal of the as‐deposited Si
4. Silicon interlayer based surface passivation of near-surface quantum wells
5. Nitridation of GaAs using helicon-wave excited and inductively coupled nitrogen plasma
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1. Plasma-Enhanced Chemical Vapor Deposition of Thin GaS Films on Various Types of Substrates;High Energy Chemistry;2023-11-30
2. Plasma-Enhanced Chemical Vapor Deposition of Thin GaS Films on Various Types of Substrates;Химия высоких энергий;2023-11-01
3. New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics;Materials Research Express;2023-04-01
4. Investigation of traps distribution in GaS single crystals by thermally stimulated current measurements;Materials Science in Semiconductor Processing;2021-04
5. Plasma enhanced atomic layer deposition of gallium sulfide thin films;Journal of Vacuum Science & Technology A;2019-03
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