The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors-Reference-Cited by-同舟云学术

The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

Published:2001-08 Issue:4 Volume:4 Page:351-356
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Cubaynes F.N.,Stolk P.A.,Verhoeven J.,Roozeboom F.,Woerlee P.H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

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4. Schmitz J, Tuinhout HP, Montree AH, Ponomarev YV, Stolk PA, Woerlee PH. Gate polysilicon optimization for deep-submicron MOSFETs. ESSDERC 1999, p. 156.

5. Influence of the grain boundaries and intragrain defects on the performance of poly-Si thin film transistors;Morimoto;J Electrochem Soc,1997

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