Silicon damage studies due to ultra-low-energy ion implantation with heavy species and rapid thermal annealing
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Moffatt S. Proceedings of the 11th International Conference on Ion Implantation Technology, 1997. p. 5.
2. Moffatt S. Proceedings of the 12th International Conference on Ion Implantation Technology, 1999, WE-6, to be published.
3. Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials
4. SIA Roadmap, published by International Sematech, Austin, Texas, 1999.
5. Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Direct observation of local atomic structure in arsenic implanted silicon;Materials Science in Semiconductor Processing;2012-12
2. Electrical activation of arsenic implanted in silicon on insulator (SOI);Journal of Physics D: Applied Physics;2007-08-16
3. The loss of boron in ultra-shallow boron implanted Si under heavy ion irradiation;Radiation Effects and Defects in Solids;2006-08
4. Thermal activation of As implanted in bulk Si and separation by implanted oxygen;Journal of Applied Physics;2004-12-15
5. Studies of ultra shallow n+–p junctions formed by low-energy As-implantation;Materials Science and Engineering: B;2004-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3