1. ITRS Roadmap 2000 update, The international technology roadmap for semiconductors 2000, http://public.itrs.net/Files/2000UpdateFinal/FrontEndProcesses2000final.pdf.
2. The mechanism of swirl defects formation in silicon;Voronkov;J Cryst Growth,1982
3. On the properties of the intrinsic point defects in silicon;Falster;Phys Stat Sol (b),2000
4. Patent WO-0022196-A1 04/20/2000INTERNATIOMEMC CRYSTAL-Cz Perfect silicon.
5. Kurz, M. Development of Crys VUN++: a software system for numerical modelling and control of industrial crystal growth processes. Ph.D. thesis, University Erlangen–Nürnberg, 1998.