Systematic study of the influence of the Czochralski hot zone design on the point defect distribution with respect to a “perfect” crystal

Author:

Krause M,Friedrich J,Müller G

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. ITRS Roadmap 2000 update, The international technology roadmap for semiconductors 2000, http://public.itrs.net/Files/2000UpdateFinal/FrontEndProcesses2000final.pdf.

2. The mechanism of swirl defects formation in silicon;Voronkov;J Cryst Growth,1982

3. On the properties of the intrinsic point defects in silicon;Falster;Phys Stat Sol (b),2000

4. Patent WO-0022196-A1 04/20/2000INTERNATIOMEMC CRYSTAL-Cz Perfect silicon.

5. Kurz, M. Development of Crys VUN++: a software system for numerical modelling and control of industrial crystal growth processes. Ph.D. thesis, University Erlangen–Nürnberg, 1998.

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