Raman study of damage processes in Si+-implanted GaAs
Author:
Publisher
Elsevier BV
Subject
Inorganic Chemistry,Organic Chemistry,Spectroscopy,Analytical Chemistry
Reference5 articles.
1. Raman and ion channeling analysis of damage in ion‐implanted GaAs: Dependence on ion dose and dose rate
2. Study of ion‐implantation damage in GaAs:Be and InP:Be using Raman scattering
3. Phonon shifts in ion bombarded GaAs: Raman measurements
4. Raman study of phosphorous‐implanted and pulsed laser‐annealed GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1×10[sup 20] cm[sup −3] Using Coimplantation of Sb and P;Electrochemical and Solid-State Letters;2010
2. Wolfgang Kiefer;Journal of Raman Spectroscopy;2006-01
3. Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopyand ion channeling;Physical Review B;1997-06-15
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