The growth of antimonides by MOVPE
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference276 articles.
1. The physics and technology of gallium antimonide: An emerging optoelectronic material
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5. InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
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1. Film growth and epitaxy methods;Encyclopedia of Condensed Matter Physics;2024
2. InAsSb-based photodetectors;Mid-infrared Optoelectronics;2020
3. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
4. High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition;Applied Physics Letters;2019-01-07
5. Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates;Journal of Crystal Growth;2018-08
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