Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by x-ray radiography and large-scale computation-Reference-Cited by-同舟云学术

Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by x-ray radiography and large-scale computation

Published:1999-01 Issue:1-4 Volume:38 Page:215-238
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Watanabe M.,Yi K.W.,Hibiya T.,Kakimoto K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Toward an integrated analysis of czochralski growth

2. Study of Thermal Symmetry in Czochralski Silicon Melt under a Vertical Magnetic Field

3. Silicon crystal growth in a cusp magnetic field

4. Homogeneous increase in oxygen concentration in Czochralski silicon crystals by a cusp magnetic field

5. Numerical study of Czochralski growth of silicon in an axisymmetric magnetic field

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