Glancing angle EXAFS of encapsulated self-assembled InAs/InP quantum wires and InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

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Glancing angle EXAFS of encapsulated self-assembled InAs/InP quantum wires and InAs/GaAs quantum dots

Published:2003-08 Issue:1-3 Volume:101 Page:174-180
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Renevier H.,Proietti M.G.,Grenier S.,Ciatto G.,González L.,Garcı́a J.M.,Gérard J.M.,Garcı́a J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)

2. Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy

3. L. González, J.M. Garcı́a, R. Garcı́a, J. Martinez-Pastor, C. Ballesteros, Appl. Phys. Lett. 2 (2000) 1104.

4. Self-organized growth of quantum boxes

5. Glancing‐angle extended x‐ray absorption fine structure study of strained InGaAs/GaAs heterostructures

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