Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs-Reference-Cited by-同舟云学术

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Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs

Published:2002-05 Issue:1-3 Volume:93 Page:234-238
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Xia R,Harrison I,Larkins E.C,Andrianov A.V,Dods S.R.A,Morgan J,Parbrook P.J,Button C.C,Hill G

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

2. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes

3. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

4. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources

5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall;Applied Physics Express;2022-07-25

2. Size-dependent optical-electrical characteristics of blue GaN/InGaN micro-light-emitting diodes;Applied Optics;2020-10-07

3. Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum;Japanese Journal of Applied Physics;2011-01-20

4. Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum;Japanese Journal of Applied Physics;2011-01-01

5. High spatial resolution investigation of electroluminescence of InGaN/GaN multiple quantum wells by using scanning near-field optical microscopy and spectroscopy;SPIE Proceedings;2005-02-09

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