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Improved reproducibility in scanning capacitance microscopy for quantitative 2D carrier profiling on silicon

  • Published:2003-09 Issue:1-3 Volume:102 Page:152-155
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Goghero D.,Giannazzo F.,Raineri V.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrostatic Fields;Quantitative Data Processing in Scanning Probe Microscopy;2018

2. Scanning capacitance microscopy characterization of AIIIBV epitaxial layers;Materials Science-Poland;2016-12-01

3. Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04

4. Electrostatic Fields;Quantitative Data Processing in Scanning Probe Microscopy;2013

5. Advances in AFM for the electrical characterization of semiconductors;Reports on Progress in Physics;2008-06-20
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