Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications-Reference-Cited by-同舟云学术

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Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications

Published:2003-09 Issue:1-3 Volume:102 Page:298-303
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Scaltrito L.,Porro S.,Cocuzza M.,Giorgis F.,Pirri C.F.,Mandracci P.,Ricciardi C.,Ferrero S.,Sgorlon C.,Richieri G.,Merlin L.,Castaldini A.,Cavallini A.,Polenta L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Defect Formation Mechanism of Bulk SiC

2. The Origin of Triangular Surface Defects in 4H-SiC CVD Epilayers

3. Raman Investigation of SiC Polytypes

4. Spatial characterization of doped SiC wafers by Raman spectroscopy

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review;Materials;2023-12-16

2. Surface modification mechanism of SiC particles using KH5X0 (X=5,6,7,8,9) silane coupling agents: First principle study;Ceramics International;2021-09

3. Wafer Level Integration of 3-D Heat Sinks in Power ICs;IEEE Transactions on Electron Devices;2017-10

4. Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers;Japanese Journal of Applied Physics;2014-01-01

5. Trapezoid defect in 4H–SiC epilayers;Journal of Crystal Growth;2012-01

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