Dielectric properties of nc-Si/CaF2 multi quantum wells-Reference-Cited by-同舟云学术

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Dielectric properties of nc-Si/CaF2 multi quantum wells

Published:2000-01 Issue: Volume:69-70 Page:309-313
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ioannou-Sougleridis V,Tsakiri V,Nassiopoulou A.G,Bassani F,Menard S,d’Avitaya F.Arnaud

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. D.J. Lockwood, Semiconductors and Semimetals, In: D.J. Lockwood, Light Emission in Silicon: From Physics to Devices, Vol. 49, Academic Press, Chapter 1.

2. A comparative study of single-electron memories

3. Fabrication and optical properties of Si/CaF2(111) multi-quantum wells

4. Electroluminescence from Si/CaF2 Multilayers Grown by Molecular Beam Epitaxy

5. E.H. Nicoelian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, pp. 222–226.

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1. Stress-induced traps in multilayered structures;Journal of Applied Physics;2011-01

2. Surface and Superlattice;Nanostructure Science and Technology;2009

3. Trapping phenomena in silicon-based nanocrystalline semiconductors;Solid-State Electronics;2007-10

4. Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices;Applied Physics Letters;2001-09-24

5. Trapping levels in (nc-Si/CaF2)n multi-quantum wells;Materials Science and Engineering: C;2001-08

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