Defects in epitaxial SiGe-alloy layers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects;Japanese Journal of Applied Physics;2016-03-07
2. Defect studies in strain-relaxed Si$_{1-x}$Ge$_{x}$ alloys;TURKISH JOURNAL OF PHYSICS;2013
3. Extended-Defect Aspects of Ge-on-Si Materials and Devices;Journal of The Electrochemical Society;2010
4. Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?;physica status solidi (c);2009-08
5. Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2008-06-13
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