In situ characterisation of III–V substrate oxide desorption by surface photoabsorption in MOVPE
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption
2. Origin of surface reflectance spectrum during epitaxy
3. Real-time optical monitoring of GaxIn1 − xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions
4. Reflectance anisotropy studies of the growth of InP on InP(001) at atmospheric pressures using tertiarybutylphosphine and trimethylindium
5. Real-time analysis of III–V-semiconductor epitaxial growth
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