In situ characterization of thermal cleaned surface for preparing superior transmission-mode GaAs photocathodes-Reference-Cited by-同舟云学术

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In situ characterization of thermal cleaned surface for preparing superior transmission-mode GaAs photocathodes

Published:2019-06-28 Issue:19 Volume:58 Page:5281
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Fang Chengwei,Zhang Yijun,Zhang Kaimin,Shi Feng,Jiao Gangcheng,Cheng Hongchang,Dai Qingxin,Zhang Jingzhi

Funder

National Natural Science Foundation of China (NSFC)

Science and Technology on Low-Light-Level Night Vision Laboratory Foundation of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference28 articles.

1. Analysis of quantum efficiency improvement in spin-polarized photocathode

2. Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope

3. Development of a high average current polarized electron source with long cathode operational lifetime

4. Review of night vision technology

5. Wet chemical cleaning process of GaAs substrate for ready-to-use

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrated ultrahigh vacuum facility for photocathode preparation and in-situ characterization;Functional Material Applications: From Energy to Sensing;2023-11-30

2. Atomic structures and electronic properties of molecular oxygen adsorption on In0.19Ga0.81As(100) surface: Ab-initio study combined with XPS/UPS analysis;Surface Science;2023-01

3. Ab-initio study of oxygen and carbon contamination on GaAs(100) planar and nanowire photocathode;Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII;2020-08-21

4. Study on surface processes and photoemission properties of NEA-GaAs after repetitive sequence of thermal pretreatment and NEA activation;Japanese Journal of Applied Physics;2020-04-01

5. Recent progress on the electronic structure, defect, and doping properties of Ga2O3;APL Materials;2020-02-01

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