Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2-Reference-Cited by-同舟云学术

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Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2

Published:2000-01 Issue: Volume:69-70 Page:295-298
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lombardo S,Coffa S,Bongiorno C,Spinella C,Castagna E,Sciuto A,Gerardi C,Ferrari F,Fazio B,Privitera S

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Room-temperature single-electron memory

2. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, T. Buchanan, IEDM Proc. (1995) 521.

3. Room temperature operation of a quantum-dot flash memory

4. Simulation of a quantum-dot flash memory

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