Substrate defects affecting gate oxide integrity-Reference-Cited by-同舟云学术

Substrate defects affecting gate oxide integrity

Published:2000-04 Issue:1-3 Volume:73 Page:184-190
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Itsumi Manabu

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference47 articles.

1. O. Nakajima, M. Itsumi, N. Shiono, Y. Yoriume, Extended Abstract, The 26th Spring Meeting, March 1979, Japanese Society of Applied Physics, 30p-R-1, 1979, pp. 512 (in Japanese).

2. M. Itsumi, Y. Yoriume, O. Nakajima, N. Shiono, Extended Abstract, The 27th Spring Meeting, March 1980, Japanese Society of Applied Physics, 3p-E-1, 1980, pp. 553 (in Japanese).

3. Origin and elimination of defects in SiO2thermally grown on Czochralski silicon substrate

4. F. Kiyosumi, H. Abe, H. Sato, M. Ino, K. Uchida, Denshi-Tsushin Gakkai, Technical Report, SSD 83-66, 1982, pp. 1 (in Japanese).

5. Y. Matsushita, M. Watatsuki, Y. Saito, Extended Abstract, 18th Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 529.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defects in Monocrystalline Silicon;Springer Handbook of Electronic and Photonic Materials;2017

2. Atomic Layer Control for Suppressing Extrinsic Defects in Ultrathin SiON Gate Insulator of Advanced Complementary Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2010-04-20

3. Defects in Monocrystalline Silicon;Springer Handbook of Electronic and Photonic Materials;2006

4. Silicon crystal growth;Crystal Growth - From Fundamentals to Technology;2004

5. X-ray characterization of crystal perfection and surface contamination in large-diameter silicon wafers;Materials Science in Semiconductor Processing;2002-08