Author:
Estreicher S.K.,Hastings J.L.,Fedders P.A.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference39 articles.
1. G.D. Watkins, in: S.T. Pantelides (Eds.), Deep Centers in Semiconductors, Gordon and Breach, New York, 1986, p. 147.
2. Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
3. Ab initiomulticenter tight-binding model for molecular-dynamics simulations and other applications in covalent systems
4. Electronic structure approach for complex silicas
5. S.K. Estreicher, P.A. Fedders, in: D.A. Jelski, T.F. George (Eds.), Computational Studies of New Materials, World Scientific, Singapore, (In print).
Cited by
25 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation of the proton implantation process in silicon;physica status solidi (c);2016-07-19
2. Hydrogen Generation and Storage in Porous Silicon;Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three;2016-01-07
3. Energetic and vibrational analysis of hydrogenated siliconmvacancies above saturation;Physical Review B;2014-08-27
4. Hydrogen in porous silicon — A review;Materials Science and Engineering: B;2013-09
5. Gettering Processes and the Role of Extended Defects;Advanced Silicon Materials for Photovoltaic Applications;2012-06-13