Author:
Dalibor Thomas,Trageser Hubert,Pensl Gerhard,Kimoto Tsunenobu,Matsunami Hiroyuki,Nizhner Daniel,Shigiltchoff Oleg,Choyke Wolfgang J.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. G. Pensl, In: J. Kassabov (Ed.), Proc. 5th Int. School on Physical Problems in Microelectronics, World Scientific, Singapore, 1987, p. 155.
2. Oxygen-Related Defect Centers in 4H Silicon Carbide
3. Step-Controlled Epitaxial Growth of High-Quality SiC Layers
4. Doping of SiC by Implantation of Boron and Aluminum
5. The O-doped and reference 4H SiC epilayer were fabricated by Daimler Benz AG, Frankfurt.
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献