Modeling of the surface roughness of thin TiSi2 films at the point of rupture-Reference-Cited by-同舟云学术

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Modeling of the surface roughness of thin TiSi2 films at the point of rupture

Published:1999-01 Issue:3 Volume:57 Page:186-196
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Amorsolo Alberto V.,Funkenbusch Paul D.,Kadin Alan M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Silicides;Osburn,1993

2. Effects of Tisix/Tinx/Al Contact Metallization Process on the Shallow Junction Related Properties

3. VLSI Technology, chapter 9;Fraser,1983

4. Geometrical effects and disintegration of narrow TiSi2/poly-Si lines

5. Formation and stability of silicides on polycrystalline silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface roughness influence on exchange bias effect in La2/3Ca1/3MnO3/La1/3Ca2/3MnO3 bilayers;Journal of Materials Science;2010-08-04

2. Three-dimensional Monte-Carlo computer simulation of grain growth in electro-plated pure Ni;Metals and Materials International;2004-04

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