Low temperature hydrogenation of dislocated Si-Reference-Cited by-同舟云学术

Low temperature hydrogenation of dislocated Si

Published:1999-02 Issue:1-2 Volume:58 Page:60-63
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Feklisova O.V.,Yakimov E.B.,Yarykin N.A.,Weber J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Yu.A. Osip’yan, A.M. Rtishchev, E.A. Shteinman, E.B. Yakimov, N.A. Yarykin, Zh. Eksp. Teor. Fiz. 82 (1982) 509 (In Russian) (Sov. Phys. JETP, 55 (1982) 294).

2. Hydrogen Passivation of the Dislocation-Related D-Band Luminescence in Silicon

3. Hydrogen effect on the optical activity of dislocations in silicon introduced at room temperature

4. M.N. Zolotukhin, V.V. Kveder, Yu.A Osip’yan, Zh. Eksp. Teor. Fiz. 82 (1982) 2068 (In Russian) (Sov. Phys. JETP 55 (1982) 1189).

5. HYDROGENATION STUDIES OF DEFORMED n-Si

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