Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells-Reference-Cited by-同舟云学术

Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells

Published:1996-12 Issue:1-3 Volume:42 Page:77-81
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Panepinto L.,Zeimer U.,Seifert W.,Seibt M.,Bugge F.,Weyers M.,Schröter W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Bandlike and localized states at extended defects in silicon

2. Evidence for the electron traps at dislocations in GaAs crystals

3. Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures

4. Temperature‐dependent critical layer thickness for strained‐layer heterostructures

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