Electrical evaluation of InP surface damage by reactive ion etching using mixture of ethane (C2H6) and hydrogen (H2)-Reference-Cited by-同舟云学术

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Electrical evaluation of InP surface damage by reactive ion etching using mixture of ethane (C2H6) and hydrogen (H2)

Published:1997-02 Issue:1-3 Volume:44 Page:61-64
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Yamamoto N.,Kishi K.,Matsumoto S.,Iga R.,Okamoto H.,Mawatari H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. 1.5 μm GaInAsP/InP buried‐heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

2. 1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen

3. Highly reliable 1.55 µm GaInAsP laser diodes buried with semi-insulating iron-doped InP

4. Proc. 8th Int. Conf. on InP and Related Materials;Yamamoto,1996

5. Proc. 8th Int. Conf. on InP and Related Materials;Kondo,1996

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