Author:
Rezazadeh A.A.,Khalid A.H.,Sotoodeh M.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
4 articles.
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1. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-07
2. Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl[sub 3] plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
3. Use of MeV ion implantations for isolation of GaAs and InP-based HBTs;The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003.
4. Investigation of ion bombardment of GaAs-based HBTs with InGaAs capping layer;The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications