Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures-Reference-Cited by-同舟云学术

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Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures

Published:2001-04 Issue:1-3 Volume:81 Page:182-184
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Yassievich I.N.,Bresler M.S.,Gusev O.B.,Pak P.E.,Tsendin K.D.,Terukov E.I.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Room‐temperature photoluminescence of erbium‐doped hydrogenated amorphous silicon

2. Luminescence quenching in erbium‐doped hydrogenated amorphous silicon

3. Erbium luminescence from hydrogenated amorphous silicon-erbium prepared by cosputtering

4. Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon

5. Excitation and temperature quenching of Er-induced luminescence ina-Si:H(Er)

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1. Recent developments in rare-earth doped materials for optoelectronics;Progress in Quantum Electronics;2002

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