Study on the I–V characteristics of ferroelectric thin film systems with the structure of MFSM-Reference-Cited by-同舟云学术

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Study on the I–V characteristics of ferroelectric thin film systems with the structure of MFSM

Published:2000-06 Issue:1 Volume:76 Page:22-25
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Jun Yu,Xiaoming Dong,Wenli Zhou,Yunbo Wang,Yuankai Zheng,Hua Wang,Gang Liu,Jifan Xie,Junxiong Gao

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Ferroelectric Memories

2. Effects of disturbing pulses on the switchable polarization of Pb(ZrTi)O3thin film capacitors

3. Fabrication and Electrical Characterization ofPt/(Ba,Sr)TiO3/PtCapacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications

4. Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CHARACTERISTICS OF Bi3.25La0.75Ti3O12 THIN FILMS ON p-Si WITH A BUFFER LAYER OF Bi4Ti3O12 PREPARED BY SOL-GEL METHOD;Integrated Ferroelectrics;2006-11

2. Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate;Acta Physica Sinica;2006

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