Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes-Reference-Cited by-同舟云学术

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Progress in the layer thickness determination of AlGaAs/GaAs heterostructures using selective etching and AFM imaging of the (110) cleavage planes

Published:1997-02 Issue:1-3 Volume:44 Page:96-100
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Müller S.,Weyher J.L.,Dian R.,Jantz W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Determination of tilted superlattice structure by atomic force microscopy

2. Cross-sectional observation of NaClO stain-etched Al0.5Ga0.5As/GaAs multilayer by atomic force microscopy

3. Proc. 22nd Int. Symp. Compound Semiconductors;Müller,1996

4. A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/lnGaAs pseudomorphic MODFETs

5. Revealing of defects in InP by shallow (submicron) photoetching

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design, Fabrication and Testing of GaAs/AlAs/InGaAs Resonant Tunneling Vector Hydrophones;Sensor Letters;2008-04-01

2. Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices;Nanotechnology;2005-06-17

3. Selective wet etching of AlGaAs in HF/CrO[sub 3] solutions: Application to vertical taper structures in integrated optoelectronic devices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

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