Temperature effect on electroluminescence spectra of silicon p–n junctions under avalanche breakdown condition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence
2. Microscopic Analysis of the Degradation Mechanism of Gallium Arsenide Metal-Semiconductor Field-Effect Transistor
3. Electroluminescence in Undoped GaAs/AlAs Superlattice due to Avalanche Breakdown
4. Verification of electron distributions in silicon by means of hot carrier luminescence measurements
5. Electroluminescence analysis of HFET's breakdown
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