Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
4. Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots
5. Electroluminescence of Self-Assembled InAs Quantum Dots in p-i-n Diodes
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Review: Developments in micro/nanoscale fabrication by focused ion beams;Vacuum;2012-02
2. Electrical and optical characterization of InAs quantum dots grown on ion implanted GaAs(100);physica status solidi (c);2003-06-18
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