In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Advanced Column-IV Epitaxial Materials for Silicon-Based Optoelectronics
2. Near-Band-Edge Photoluminescence from PseudomorphicSi1−yCy/SiQuantum Well Structures
3. The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin
4. Suppressed diffusion of boron and carbon in carbon-rich silicon
5. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
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1. Influence of Carbon inIn-situCarbon-Doped SiGe Films on Si(001) Substrates on Epitaxial Growth Characteristics;Japanese Journal of Applied Physics;2010-04-20
2. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010
3. Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)–2×1 surface;Thin Solid Films;2006-06
4. Fabrication technology of SiGe hetero-structures and their properties;Surface Science Reports;2005-11
5. Reduced pressure–chemical vapor deposition of high Ge content Si1−xGex and high C content Si1−yCy layers for advanced metal oxide semiconductor transistors;Journal of Crystal Growth;2005-04
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