Detection and analysis of crystal defects in silicon by scanning infrared depolarization and photoluminescence heterodyne techniques
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
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2. Photoelastic Imaging of Process Induced Defects in 300mm-Silicon Wafers
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5. Proc. Conf. DRIP'97 (Templin), Inst. Phys. Conf. Series 160;Krawczyk,1997
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