Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology-Reference-Cited by-同舟云学术

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Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology

Published:2004-08 Issue:1-2 Volume:186 Page:17-20
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Lallement F,Grouillet A,Juhel M,Reynard J.-P,Lenoble D,Fang Z,Walther S,Rault Y,Godet L,Scheuer J

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference5 articles.

1. International Technology Roadmap for Semiconductors, Update, http://www.public.itrs.net) (2002).

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1. Local doping of silicon by a point-contact microwave applicator;Microelectronic Engineering;2011-09

2. Pulsed Inductively-Coupled Plasma Doping of Phosphorus for N+-P Junction Fabrication;Journal of the Korean Physical Society;2009-05-15

3. Effect of electron emission and potential perturbations of a hot filament in high voltage pulsed glow discharge;Physics Letters A;2008-02

4. Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation;Solid State Phenomena;2007-10

5. Pulsed plasma production for applications in plasma immersion ion implantation and its implications;Surface and Coatings Technology;2007-04

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