Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy-Reference-Cited by-同舟云学术

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Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

Published:2005-06 Issue:1-3 Volume:196 Page:25-29
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Dvurechenskii A.V.,Smagina J.V.,Groetzschel R.,Zinovyev V.A.,Armbrister V.A.,Novikov P.L.,Teys S.A.,Gutakovskii A.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. Si/Ge nanostructures

2. Molecular beam epitaxy of silicon–germanium nanostructures

3. Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam

4. Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si

5. Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces

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1. Ion Beam-Assisted Deposition;Low-Energy Ion Irradiation of Materials;2022

2. Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering;Beilstein Journal of Nanotechnology;2017-01-03

3. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system;Applied Surface Science;2016-11

4. Regularities of ion-beam-induced crystallization and properties of InAs-QD/GaAs(001) semiconductor nanoheterostructures;Nanotechnologies in Russia;2016-07

5. Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering;Journal of Nanotechnology;2016

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