Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD-Reference-Cited by-同舟云学术

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Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD

Published:2006-02 Issue:10 Volume:200 Page:3250-3253
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Liu C.H.,Lin T.K.,Chang S.J.,Su Y.K.,Chiou Y.Z.,Wang C.K.,Chang S.P.,Tang J.J.,Huang B.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference9 articles.

1. Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

2. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

3. Hydrogenation of GaAs MISFETs with Al2O3 as the gate insulator

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1. Optical, structural, morphological and compositional characterization of a Co-doped GaAs semiconducting thin film produced by thermionic vacuum arc;Journal of Alloys and Compounds;2016-04

2. Some physical properties of Co-doped GaAs thin films grown by thermionic vacuum arc;AIP Conference Proceedings;2016

3. Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc;Materials Focus;2015-12-01

4. Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc;Journal of Electronic Materials;2015-10-28

5. Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc;Vacuum;2015-09

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