Detection of planar defects caused by ion irradiation in Si using molecular dynamics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. {113} Loops in electron-irradiated silicon
2. An Atomic Model of Electron-Irradiation-Induced Defects on {113} in Si
3. Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chain
4. Agglomeration of self-interstitials in Si observed at 450 °C by high-resolution transmission electron microscopy
5. Interstitial defects in silicon from 1–5 keV Si+ ion implantation
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3. Coarse-grained analysis of crystalline defects caused by ion beam irradiation: The PM (pixel mapping) method;Electrical Engineering in Japan;2011-07-15
4. Orientation of Liquid Crystalline Molecules on Mid-IR Transparent Plates Subjected to Ion Bombardment;Molecular Crystals and Liquid Crystals;2011-06-30
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