Secondary electron suppression in nitrogen plasma ion implantation using a low DC magnetic field-Reference-Cited by-同舟云学术

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Secondary electron suppression in nitrogen plasma ion implantation using a low DC magnetic field

Published:2007-04 Issue:15 Volume:201 Page:6597-6600
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Ueda M.,Tan I.H.,Dallaqua R.S.,Rossi J.O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference7 articles.

1. Plasma immersion ion implantation (PIII);Rej,1996

2. Handbook of Plasma Immersion Ion Implantation and Deposition,2000

3. J.N. Matossian, J.D. Williams “Confinement of secondary electrons in plasma ion processing”, US patent 5,498,290, Hughes Aircraft Company, L. Angeles, CA, 1996.

4. Magnetic insulation of secondary electrons in plasma source ion implantation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonuniform plasma diffusion and multi-pulse effect in plasma-based ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-01

2. Study of magnetic field enhanced plasma immersion ion implantation in Silicon;Journal of Physics: Conference Series;2014-05-07

3. Investigation of Plasma Immersion Ion Implantation Process in Magnetic Mirror Geometry;IEEE Transactions on Plasma Science;2011-11

4. Effects of strong magnetic field on plasma immersion ion implantation of dielectric substrates;Vacuum;2009-08

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