Etching characteristics of TaN thin film using an inductively coupled plasma
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. Dry etching of TaN∕HfO2 gate-stack structure in BCl3∕Ar∕O2 inductively coupled plasmas
2. Design considerations of high-κ gate dielectrics for sub-0.1-μm MOSFET's
3. Structural and electrical properties of copper thin films prepared by filtered cathodic vacuum arc technique
4. Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films
5. Superior thermal stability of Ta/TaN bi-layer structure for copper metallization
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1. Work Function Tuning of Zinc–Tin Oxide Thin Films Using High-Density O2 Plasma Treatment;Coatings;2020-10-25
2. Effect of texture on wear resistance of tantalum nitride film;Tribology International;2019-05
3. Etching Characteristics of Titanium Nitride in Chlorine-Based Plasma;Journal of Nanoscience and Nanotechnology;2016-12-01
4. Influence of Oxygen Additions on the Etch Characteristics of TaN Thin Films in CF4/Ar Plasma;Journal of Nanoscience and Nanotechnology;2016-12-01
5. Dry etching characteristics of TaN absorber for extreme ultraviolet mask with Ru buffer layer;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-07
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