Fabricating ZnSnN2 with cosputtering-Reference-Cited by-同舟云学术

Fabricating ZnSnN2 with cosputtering

Published:2019-02 Issue: Volume:359 Page:169-174
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Cai Xing-Min^ORCID,Wang Bo,Ye Fan^ORCID,Zeng Jun-Jie,Vaithinathan Karthikeyan,Wang Fan^ORCID,Ma Xiu-Fang,Xie Yi-Zhu,Zhang Dong-Ping,Fan Ping,Roy V.A.L.

Funder

Natural Science Foundation of China

RGC of Hong Kong

Science and Technology Plan of Shenzhen Municipal for Cooperation and Innovation

Shenzhen Key Lab Fund

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference34 articles.

1. Growth of ZnSnN2 by molecular beam epitaxy;Feldberg;J. Electron. Mater.,2014

2. Chemical environment and functional properties of highly crystalline ZnSnN2 thin films deposited by reactive sputtering at room temperature;Alnjiman;Sol. Energy Mater. Sol. Cells,2018

3. Thin film solar cell based on ZnSnN2/SnO heterojunction;Javaid;hys. Status Solidi. (RRL),2018

4. Band offset engineering in ZnSnN2-based heterojunction for low-cost solar cells;Javaid;ACS Photonics,2018

5. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions;Qin;Appl. Phys. Lett.,2016

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1. Electrical and optical properties of nanocrystalline ZnSnN2;Thin Solid Films;2023-05

2. Oxidation-Resistant Amorphous Zinc Tin Nitride Films with Tunable Optical and Electrical Properties;Chemistry of Materials;2022-07-19

3. Emerging Earth-Abundant Solar Absorbers;ACS Energy Letters;2022-03-30

4. Approaching Theoretical Band Gap of ZnSnN2 Films via Bias Magnetron Cosputtering at Room Temperature;ACS Applied Electronic Materials;2021-08-20

5. Review of ZnSnN2 semiconductor material;Journal of Physics: Energy;2020-07-01