Approaching Theoretical Band Gap of ZnSnN2 Films via Bias Magnetron Cosputtering at Room Temperature-Reference-Cited by-同舟云学术

Approaching Theoretical Band Gap of ZnSnN2 Films via Bias Magnetron Cosputtering at Room Temperature

Published:2021-08-20 Issue:9 Volume:3 Page:3855-3866
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Virfeu Agathe¹,Alnjiman Fahad¹²,Ghanbaja Jaafar¹,Borroto Alejandro¹^ORCID,Gendarme Christine¹,Migot Sylvie¹,Kopprio Leonardo³,Le Gall Sylvain³,Longeaud Christophe³,Vilcot Jean-Pierre⁴,Pierson Jean-François¹^ORCID

Affiliation:

1. Institut Jean Lamour, UMR 7198, CNRS, Université de Lorraine, 2 allée André Guinier, Campus ARTEM, B.P. 50840, 54011 Nancy Cedex, France

2. King Saud University, College of Science, Physics, and Astronomy Department, P.O. Box 2455, Riyadh 11451, Saudi Arabia

3. Laboratoire de Génie Electrique et Electronique de Paris (Geeps), CNRS, CentraleSupelec, Université Paris Saclay, Sorbonne Université, 11 rue Joliot Curie, 91190 Gif sur Yvette, France

4. Université Lille, CNRS, Centrale Lille, Université Polytechnique Hauts-de-France, UMR 8520 - IEMN - Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France

Funder

Agence Nationale de la Recherche

R??gion Grand Est

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00478

Reference74 articles.

1. First-principles study of phonons and related ground-state properties and spectra inZn-IV-N2compounds

2. Thin Film Solar Cell Based on ZnSnN2 /SnO Heterojunction