Reduction of oxide leakage currents of EEPROM at STI corners using sacrificial oxide/liner SiN/LPCVD MTO-Reference-Cited by-同舟云学术

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Reduction of oxide leakage currents of EEPROM at STI corners using sacrificial oxide/liner SiN/LPCVD MTO

Published:2008-08 Issue:22-23 Volume:202 Page:5697-5700
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Kim M.S.,Roh Y.,Park C.S.,Cho I.S.,Jeoun I.H.,Ahn E.Y.,Kim B.H.,Kim K.J.,Nam S.K.,Park H.S.,Nam D.W.,Baek C.Y.,Park W.H.,Kim B.H.,Park S.W.,Kim M.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference8 articles.

1. The Oxidation of Shaped Silicon Surfaces

2. Ar Annealing for Suppression of Gate Oxide Thinning at Shallow Trench Isolation Edge

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Side and Corner Region Non-Uniformities in Grown SiO₂ and Their Implications on Current, Capacitance and Breakdown Characteristics;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Reliability Improvement by 0.153UM CMOS Using HDP-CVD at STI Edge Sin Liner;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26

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